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Popular Questions
- If a- current gain of a transistor is 0.98. What is the value of B- current gain of the transistor?
- A solid reflects incident light and its electrical conductivity decreases with temperature. The binding in this solid is
- In a cubic unit cell of bcc structure, the lattice points (i.e. number of atoms) are
- An n-p-n transistor can be considered to be equivalent to two diodes, connected. Which of the following figures is the correct one..
- A change of 8.0 mA in the emitter current brings a change of 7.9 mA in the collector current. The values of α and B are
- A solid that transmits light in visible region and has a very low melting point possesses
- Atomic radius of fcc is
- Which of the following is an amorphous solid
- The laptop PCs modern electronic watches and calculators
- The nearest distance between two atoms
- Sodium has body centred packing
- In good Conductors of electricity, the type of bonding that exists is
- The crystal structure can be studied by using
- What is the net force on a
- A Si and a Ga diode has identical physical dimension
- The ionic bond is absent in
- In a common-emitter amplifier the input signal is applied across the
- A material has N atom in its crystal structure which is a hexagonal close packed
- A solid reflects incident light and its electrical conductivity decreases with temperature
- If the lattice parameter for a crystalline structure is
- The term liquid crystal refers to a state that is intermediate between
- Copper has face centered cubic (fcc) lattice with interatomic spacing equal to
- Bonding in a germanium crystal
- Absorption of X-Rays is maximum in which of the following material sheet of same thickness
- For a cubic crystal structure which one of the following relations indicating the cell characteristic is correct
- In a common-base amplifier, the phase difference between the input signal voltage and output voltage is
- The forward biased diode connection is
- In a common emitter - amplifier, the input signal is applied across
- The part of a transistor which is heavily doped to produce a large number of majority carriers is
- In a transistor the base is
- For a crystal system,a=b=c
- In order to rectify an alternating current one uses a
- when NPN transistor is used as an amplifier
- The ionic bond is absent in
- The energy band gap (distance between the conduction band and valence band) in conductor is
- In a semiconductor, separation between conduction and valence band is of the order of
- For an insulator, the forbidden energy gap is
- When a solid with a band gap has a donor level just below its empty energy band, the solid is
- In BJT, maximum current flows in which of the following?
- at absolute zero, si acts as
